碳化硅电力设计考虑因素

白皮书概述

Silicon carbide (SiC), a crystalline blend of silicon and carbon is a well-established technology with several benefits over silicon-based technologies for high-voltage, high-frequency-switching applications, e.g., Silicon superjunction (SJ) and insulated-gate bipolar transistors (IGBTs). With the recent introduction of 650V SiC MOSFETS, electronic applications have rapidly expanded. However, engineers must consider the characteristics, benefits, and limitations of SiC material.

WolfSpeed的这款白皮书讨论了用于选择SIC的几个考虑因素，包括温度性能，有效的开关频率，栅极驱动器，坚固性和降级，以及处理EMI。通过关注这些考虑因素和良好的设计原则，工程师可以利用各种大功率应用中的SIC。

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